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undergraduate thesis
Mjerenja karakteristika poluvodičkih sklopnih komponenata
2018. urn:nbn:hr:200:770624
Kristić, Nikola
Josip Juraj Strossmayer University of Osijek
Faculty of Electrical Engineering, Computer Science and Information Technology Osijek
Department of Electromechanical Engineering
Chair of Electric Machines and Power Electronics

Cite this document

Kristić, N. (2018). Mjerenja karakteristika poluvodičkih sklopnih komponenata (Undergraduate thesis). Retrieved from https://urn.nsk.hr/urn:nbn:hr:200:770624

Kristić, Nikola. "Mjerenja karakteristika poluvodičkih sklopnih komponenata." Undergraduate thesis, Josip Juraj Strossmayer University of Osijek, Faculty of Electrical Engineering, Computer Science and Information Technology Osijek, 2018. https://urn.nsk.hr/urn:nbn:hr:200:770624

Kristić, Nikola. "Mjerenja karakteristika poluvodičkih sklopnih komponenata." Undergraduate thesis, Josip Juraj Strossmayer University of Osijek, Faculty of Electrical Engineering, Computer Science and Information Technology Osijek, 2018. https://urn.nsk.hr/urn:nbn:hr:200:770624

Kristić, N. (2018). 'Mjerenja karakteristika poluvodičkih sklopnih komponenata', Undergraduate thesis, Josip Juraj Strossmayer University of Osijek, Faculty of Electrical Engineering, Computer Science and Information Technology Osijek, accessed 18 August 2022, https://urn.nsk.hr/urn:nbn:hr:200:770624

Kristić N. Mjerenja karakteristika poluvodičkih sklopnih komponenata [Undergraduate thesis]. Osijek: Josip Juraj Strossmayer University of Osijek, Faculty of Electrical Engineering, Computer Science and Information Technology Osijek; 2018 [cited 2022 August 18] Available at: https://urn.nsk.hr/urn:nbn:hr:200:770624

N. Kristić, "Mjerenja karakteristika poluvodičkih sklopnih komponenata", Undergraduate thesis, Josip Juraj Strossmayer University of Osijek, Faculty of Electrical Engineering, Computer Science and Information Technology Osijek, Osijek, 2018. Available at: https://urn.nsk.hr/urn:nbn:hr:200:770624

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Metadata
TitleMjerenja karakteristika poluvodičkih sklopnih komponenata
Title (english)Measurements of the semiconductor switching components characteristics
AuthorNikola Kristić
MentorDenis Pelin (mentor)
Committee memberKrešimir Miklošević (predsjednik povjerenstva)
Committee memberDenis Pelin (član povjerenstva)
Committee memberAndrej Brandis (član povjerenstva)
GranterJosip Juraj Strossmayer University of Osijek
Faculty of Electrical Engineering, Computer Science and Information Technology Osijek
(Department of Electromechanical Engineering)
(Chair of Electric Machines and Power Electronics)
Osijek
Defense date and country2018-09-23, Croatia
Scientific / art field,
discipline and subdiscipline		TECHNICAL SCIENCES
Electrical Engineering
Electromechanical Engineering
Abstract
Ovaj završni rad sastoji se od dva dijela koji obuhvaćaju upoznavanje s radom određenih poluvodičkih komponenata i dizajniranje univerzalne pločice preko koje će se mjeriti bitni sklopni parametri poluvodičkih komponenata. Prvi dio se sastoji od dva eksperimenta uz koje je potrebno i spojiti zadane strujne krugove na didaktičku opremu. Eksperimenti su vezani za poluvodičke komponente MOSFET (engl. Metal-Oxid-Semiconductor-Field-Effect Transistor) i IGBT (eng. Insulated-Gate Bipolar Transistor). Uz pomoć tih eksperimenata se upoznalo s radom komponenata i njihovim određenim, parametrima (npr. Napon praga, gubici snage i sl.). Drugi dio se sastoji od dizajniranja pločice i ispitivanja rada paralelnog spoja MOSFET-a. Isto tako ispitan je utjecaj otpora upravljačke priključnice na rad paralelnog spoja MOSFET-a. Za ispitivanje je potrebno bilo dodati otpor određene vrijednosti u seriju s upravljačkom priključnicom jednom od MOSFET-a.
Abstract (english)
This final work consists two parts that include familiarzing with operation of certain semiconductor components and designing a universal board over which the essential switching parameters of semiconductor components will be measured. The first part consists of two experiments that require the connection of the set circuits to the didactic equipment. The experiments are related to semiconductor components of the MOSFET (Metal-Oxid-Semiconductor-Field-Effect Transistor) and the IGBT (Insulated Door Bipolar Transistor). With the help of these experiments learning about the work of the components and their specific parameters is obtained (eg, threshold voltage, power losses etc.). The second part consists of board designing and testing how MOSFET's parallel connection works. The impact of the resistance on MOSFET's parallel connection also has been tested For the testing it was necessary to add resistance with specified value in the series with gate on one of the MOSFETs.
Keywords
Keywords (english)
Languagecroatian
URN:NBNurn:nbn:hr:200:770624
Study programmeTitle: Professional study programme of Electrical Engineering; specializations in: Power Engineering, Automation, Informatics
Course: Automation
Study programme type: professional
Study level: undergraduate
Academic / professional title: stručni/a prvostupnik/prvostupnica (baccalaureus/baccalaurea) inženjer/inženjerka elektrotehnike (stručni/a prvostupnik/prvostupnica (baccalaureus/baccalaurea) inženjer/inženjerka elektrotehnike)
Type of resourceText
File originBorn digital
Access conditionsOpen access
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Created on2018-10-16 07:15:17